sot-23 plastic-encapsulate transistors transistor (npn) feature z excellent h fe linearity z low noise z marking:cr maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c =100ua, i e =0 60 v collector-emitter breakdown voltage v(br) ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage v(br) ebo i e =0.1ma, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 ua collector cut-off current i cer v ce =55v,r=10m ? 0.1 ua emitter cut-off current i ebo v eb =5v , i c =0 0.1 ua h fe(1) v ce =6 v , i c =1ma 130 400 dc current gain h fe(2) v ce =6 v , i c =0.1ma 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be (sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v,i c =10ma,f =30 mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mh z 3.0 pf noise figure nf v ce = 6v,i c =0.1 ma r g =10 k ? ,f=1k mh z 4 10 db classification of h fe(1) rank l h range 130-200 200-400 so t -23 1. base 2. emitter 3. collector 2012- 0 willas electronic corp. C945
024681 01 2 0 2 4 6 8 10 12 0.1 1 10 100 200 400 600 800 1000 1 10 100 10 100 1 10 100 10 100 1000 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.1 1 10 0 5 10 15 common emitter t a =25 24ua 9ua 30ua 27ua 21ua 18ua 15ua 12ua 6ua i b =3ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 30 3 0.3 150 v besat i c base-emitter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 30 3 0.3 30 31 5 0 collector current i c (ma) collector-emitter saturation voltage v cesat (mv) t a =100 t a =25 =10 v cesat i c 300 30 30 3 0.7 300 dc current gain h fe collector current i c (ma) t a =25 t a =100 v ce =6v i c h fe 150 typical characteristics collector power dissipation p c (w) ambient temperature t a ( ) p c t a capacitance c (pf) reverse bias voltage v (v) c ob c ib f=1mhz i e =0 /i c =0 t a =25 v cb / v eb c ob / c ib 2012- 0 willas electronic corp. sot-23 plastic-encapsulate transistors C945
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012- 0 willas electronic corp. sot-23 plastic-encapsulate transistors C945
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